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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32240


    Title: Voltage-tunable SiO2-isolated a-SiC : H and/or a-SiN : H p-i-n thin-film LEDs fabricated on c-Si
    Authors: Yeh,Rong-Hwei;Liu,Wen-Hsiung;Lo,Shih-Yung;Hong,Jyh-Wong
    Contributors: 電機工程研究所
    Keywords: LIGHT-EMITTING DIODE;ELECTROLUMINESCENCE;PHOTOLUMINESCENCE;LAYERS;SIO2-FILMS
    Date: 2006
    Issue Date: 2010-07-06 18:22:04 (UTC+8)
    Publisher: 中央大學
    Abstract: A voltage-tunable amorphous p-i-n thin-film light emitting diodes (TFLEDs) with SiO2-isolation on n(+)-type crystalline silicon (c-Si) has been proposed and fabricated successfully. The structure of the device with i-a-SiC:H and i-a-SiN:H luminescent laye
    Relation: SOLID-STATE ELECTRONICS
    Appears in Collections:[電機工程研究所] 期刊論文

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