Improvement of mesa-sidewall leakage current using benzocyclobuten sidewall process in InGaAs/InP MSM photodetector

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > journal & Dissertation > Item 987654321/32316

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32316

Title:	Improvement of mesa-sidewall leakage current using benzocyclobuten sidewall process in InGaAs/InP MSM photodetector
Authors:	Chiu,WY;Huang,FH;Wu,YS;Lin,DM;Chan,YJ;Chen,SH;Chyi,JI;Shi,JW
Contributors:	電機工程研究所
Keywords:	PERFORMANCE
Date:	2005
Issue Date:	2010-07-06 18:23:54 (UTC+8)
Publisher:	中央大學
Abstract:	In recent decades, metal - semiconductor-metal (MSM) photodetector for optical fiber communication applications have been studied extensively. The dark current in MSM PD is an important parameter that can be reduced by schottky barrier enhancement and fab
Relation:	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Appears in Collections:	[電機工程研究所] 期刊論文

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