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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32321


    Title: InGaAsN/GaAs quantum-well lasers using two-step and nitride passivation growth
    Authors: Chiu,PC;Yeh,NT;Hong,CC;Hsieh,TP;Tsai,YT;Ho,WJ;Chyi,JI
    Contributors: 電機工程研究所
    Keywords: CHEMICAL-VAPOR-DEPOSITION;LOW-THRESHOLD;GAINNAS;EPITAXY
    Date: 2005
    Issue Date: 2010-07-06 18:24:02 (UTC+8)
    Publisher: 中央大學
    Abstract: The optical properties of InGaAsN QW grown on AlGaAs/GaAs cladding layers were investigated. Al contamination in the quantum well due to the memory effect is responsible for the degradation of optical quality. We propose a growth method to reduce the Al c
    Relation: APPLIED PHYSICS LETTERS
    Appears in Collections:[電機工程研究所] 期刊論文

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