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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32322


    Title: Investigation of layered structure SAW devices fabricated using low temperature grown AlN thin film on GaN/sapphire
    Authors: Lin,HF;Wu,CT;Chien,WC;Chen,SW;Kao,HL;Chyi,JI;Chen,JS
    Contributors: 電機工程研究所
    Keywords: ELECTROMECHANICAL COUPLING COEFFICIENT;HELICON SPUTTERING SYSTEM;ALUMINUM NITRIDE;GAN;SAPPHIRE;VELOCITY
    Date: 2005
    Issue Date: 2010-07-06 18:24:04 (UTC+8)
    Publisher: 中央大學
    Abstract: Epitaxial AlN films have been grown on GaN/sapphire using helicon sputtering at 300 degrees C. The surface acoustic wave (SAW) filters fabricated on AlN/GaN/sapphire exhibit more superior characteristics than those made on GaN/sapphire. This composite str
    Relation: IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL
    Appears in Collections:[電機工程研究所] 期刊論文

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