DC characteristics of AlGaN/GaN heterostructure field-effect transistors on freestanding GaN substrates

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Title:	DC characteristics of AlGaN/GaN heterostructure field-effect transistors on freestanding GaN substrates
Authors:	Irokawa,Y;Luo,B;Ren,F;Pan,CC;Chen,GT;Chyi,JI;Park,SS;Park,YJ;Pearton,SJ
Contributors:	電機工程研究所
Keywords:	HIGH-ELECTRON-MOBILITY;VAPOR-PHASE EPITAXY;BULK GAN;MICROWAVE NOISE;HEMTS;PERFORMANCE;PASSIVATION;TEMPLATES;OXIDE
Date:	2004
Issue Date:	2010-07-06 18:26:06 (UTC+8)
Publisher:	中央大學
Abstract:	AlGaN/GaN heterostructure field-effect transistors (HFETs) were grown by metallorganic chemical vapor deposition on either sapphire or freestanding GaN substrates. The devices in the latter case show consistently lower knee voltage, higher output resistan
Relation:	ELECTROCHEMICAL AND SOLID STATE LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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