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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32402

    Title: GalGaN HEMTs grown by hydride vapor phase epitaxy on AlN/SiC substrates
    Authors: LaRoche,JR;Luo,B;Ren,F;Baik,KH;Stodilka,D;Gila,B;Abernathy,CR;Pearton,SJ;Usikov,A;Tsvetkov,D;Soukhoveev,V;Gainer,G;Rechnikov,A;Dimitriev,V;Chen,GT;Pan,CC;Chyi,JI
    Contributors: 電機工程研究所
    Date: 2004
    Issue Date: 2010-07-06 18:26:35 (UTC+8)
    Publisher: 中央大學
    Abstract: GalGaN high electron mobility transistors (HEMTs) were fabricated on layer structures grown by metal organic chemical vapor deposition on hydride vapor phase epitaxy grown AlN epi-layers on 6H-SiC substrates. The presence of the AlN provides an insulat
    Appears in Collections:[電機工程研究所] 期刊論文

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