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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32408


    Title: InGaN-GaN MQW LEDs with current blocking layer formed by selective activation.
    Authors: Lee,CM;Chuo,CC;Liu,YC;Chen,IL;Chyi,JI
    Contributors: 電機工程研究所
    Keywords: BUFFER LAYER;GROWTH
    Date: 2004
    Issue Date: 2010-07-06 18:26:47 (UTC+8)
    Publisher: 中央大學
    Abstract: Selective activation technique was used to define a semi-insulating current-blocking layer underneath the p-pad of InGaN-GaN multiple-quantum-well light-emitting diodes (LEDs). The output power of the LEDs at 20 mA was increased 10% because less current w
    Relation: IEEE ELECTRON DEVICE LETTERS
    Appears in Collections:[電機工程研究所] 期刊論文

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