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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32499


    Title: Reducing dark current in a high-speed Si-based interdigitated trench-electrode MSM photodetector
    Authors: Lin,CS;Chang,YC;Yeh,RH;Hong,JW
    Contributors: 電機工程研究所
    Keywords: CRYSTALLINE SILICON HETEROJUNCTIONS;SEMICONDUCTOR-METAL PHOTODETECTORS;TEMPERATURE;WAFER
    Date: 2003
    Issue Date: 2010-07-06 18:29:52 (UTC+8)
    Publisher: 中央大學
    Abstract: The authors have studied higher dark-current temperature dependence in a trench-electrode Si-based metal-semiconductor-metal (MSM) photodetector which has a hydrogenated intrinsic amorphous silicon (i-a-Si:H) dark-current suppression layer. The poor dark-
    Relation: IEEE TRANSACTIONS ON ELECTRON DEVICES
    Appears in Collections:[電機工程研究所] 期刊論文

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