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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32564


    Title: Single-crystal GaN/Gd2O3/GaN heterostructure
    Authors: Hong,M;Kwo,J;Chu,SNG;Mannaerts,JP;Kortan,AR;Ng,HM;Cho,AY;Anselm,KA;Lee,CM;Chyi,JI
    Contributors: 電機工程研究所
    Keywords: GATE DIELECTRICS GD2O3;GAAS MOSFETS;GA2O3(GD2O3);OXIDE;CHANNEL;Y2O3
    Date: 2002
    Issue Date: 2010-07-06 18:32:14 (UTC+8)
    Publisher: 中央大學
    Abstract: Heteroepitaxy of single-crystal Gd2O3 on GaN (with a wurtzite hexagonal close-packed (hcp) structure) and single-crystal GaN on Gd2O3 was achieved. In situ reflection high-energy electron diffraction reveals a sixfold symmetry in the in-plane epitaxy of t
    Relation: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    Appears in Collections:[電機工程研究所] 期刊論文

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