Thermal annealing effects on stimulated emission of high-indium-content InGaN/GaN single quantum well structure

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32566

Title:	Thermal annealing effects on stimulated emission of high-indium-content InGaN/GaN single quantum well structure
Authors:	Chen,CC;Hsieh,KL;Chi,GC;Chuo,CC;Chyi,JI;Chang,CA
Contributors:	電機工程研究所
Keywords:	P-TYPE GAN;CONTACT
Date:	2002
Issue Date:	2010-07-06 18:32:18 (UTC+8)
Publisher:	中央大學
Abstract:	The optical pumping spectra of InGaN/GaN single quantum well structures with high indium content after thermal annealing were analyzed at room temperature. Redshift of the peak position in the optical pumping spectra was observed after the samples were an
Relation:	SOLID-STATE ELECTRONICS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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