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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32616


    Title: Interdiffusion of In and Ga in InGaN/GaN multiple quantum wells
    Authors: Chuo,CC;Lee,CM;Chyi,JI
    Contributors: 電機工程研究所
    Keywords: CONTINUOUS-WAVE OPERATION;LASER-DIODES;VACANCIES
    Date: 2001
    Issue Date: 2010-07-06 18:34:10 (UTC+8)
    Publisher: 中央大學
    Abstract: Thermal stability of InxGa1-xN/GaN multiple quantum wells with InN mole fraction of similar to0.23 and similar to0.30 was investigated by postgrowth thermal annealing. Low temperature photoluminescence spectroscopy was employed to determine the temperatur
    Relation: APPLIED PHYSICS LETTERS
    Appears in Collections:[Graduate Institute of Electrical Engineering] journal & Dissertation

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