AlGaN/GaN Schottky barrier diodes with multi-MgxNy/GaN buffer

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35183

Title:	AlGaN/GaN Schottky barrier diodes with multi-MgxNy/GaN buffer
Authors:	Lee,K. H.;Chang,S. J.;Chang,P. C.;Wang,Y. C.;Kuo,C. H.
Contributors:	光電科學與工程學系
Date:	2008
Issue Date:	2010-07-07 14:05:48 (UTC+8)
Publisher:	中央大學
Abstract:	AlGaN/GaN Schottky barrier diodes (SBDs) with multi-MgxNy/GaN buffer were fabricated and investigated. It was found that we can effectively suppress the formation of threading dislocation in the epitaxial layers and thus obtain better crystal quality usin
Relation:	JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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