GaN-Based Schottky Barrier Photodetectors With a 12-Pair MgxNy-GaN Buffer Layer

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35200

Title:	GaN-Based Schottky Barrier Photodetectors With a 12-Pair MgxNy-GaN Buffer Layer
Authors:	Chang,S. J.;Lee,K. H.;Chang,P. C.;Wang,Y. C.;Yu,C. L.;Kuo,C. H.;Wu,S. L.
Contributors:	光電科學與工程學系
Keywords:	LIGHT-EMITTING-DIODES;VAPOR-PHASE EPITAXY;SAPPHIRE SUBSTRATE;MICROSTRUCTURE;GROWTH;FILMS;BLUE;LEDS
Date:	2008
Issue Date:	2010-07-07 14:06:20 (UTC+8)
Publisher:	中央大學
Abstract:	GaN-based ultraviolet (UV) photodetectors (PDs) separately prepared with a conventional single low-temperature (LT) GaN buffer layer and a 12-pair MgxNy-GaN buffer layer were both fabricated. It was found that we could reduce threading dislocation (TD) de
Relation:	IEEE JOURNAL OF QUANTUM ELECTRONICS????
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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