Growth and characterization of crack-free semipolar {1-101}InGaN/GaN multiple-quantum well on V-grooved (001)Si substrates

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35201

Title:	Growth and characterization of crack-free semipolar {1-101}InGaN/GaN multiple-quantum well on V-grooved (001)Si substrates
Authors:	Chen,Guan-Ting;Chang,Shih-Pang;Chyi,Jen-Inn;Chang,Mao-Nan
Contributors:	光電科學與工程學系
Keywords:	VAPOR-PHASE EPITAXY;GAN LAYERS;SI(111);SI(001);SI
Date:	2008
Issue Date:	2010-07-07 14:06:22 (UTC+8)
Publisher:	中央大學
Abstract:	This work elucidates the two-stage growth of GaN on V-grooved (001)Si substrates using metal-organic chemical vapor deposition. The first growth stage proceeds on the {111}Si sidewalls until GaN fills the V grooves. Then the second stage continues and lea
Relation:	APPLIED PHYSICS LETTERS????
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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