Growth of InN on Si (111) by atmospheric-pressure metal-organic chemical vapor deposition using InlN double-buffer layers

NCU Institutional Repository > 理學院 > 光電科學與工程學系 > 期刊論文 > Item 987654321/35203

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/35203

题名:	Growth of InN on Si (111) by atmospheric-pressure metal-organic chemical vapor deposition using InlN double-buffer layers
作者:	Li,Zhen-Yu;Lan,Shan-Ming;Uen,Wu-Yih;Chen,Ying-Ru;Chen,Meng-Chu;Huang,Yu-Hsiang;Ku,Chien-Te;Liao,Sen-Mao;Yang,Tsun-Neng;Wang,Shing-Chung;Chi,Gou-Chung
贡献者:	光電科學與工程學系
关键词:	MOLECULAR-BEAM EPITAXY;FUNDAMENTAL-BAND GAP;INDIUM NITRIDE;HEXAGONAL INN;WURTZITE INN;MOVPE INN;RF-MBE;FILMS;SI(111);TEMPERATURE
日期:	2008
上传时间:	2010-07-07 14:06:26 (UTC+8)
出版者:	中央大學
摘要:	Indium nitride (InN) epilayers have been successfully grown on Si (111) substrates with low-temperature (450 degrees C) grown InN and high-temperature (1050 degrees C) grown AlN (InlN) double-buffer layers by atmospheric-pressure metal-organic chemical
關聯:	JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
显示于类别:	[光電科學與工程學系] 期刊論文

文件中的档案:

档案	描述	大小	格式	浏览次数
index.html		0Kb	HTML	458	检视/开启

在NCUIR中所有的数据项都受到原著作权保护.

社群 sharing