Mechanism underlying damage induced in gallium nitride epilayer during laser lift-off process

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题名:	Mechanism underlying damage induced in gallium nitride epilayer during laser lift-off process
作者:	Lee,Ko-Tao;Lee,Yeeu-Chang;Tu,Sheng-Han;Lin,Ching-Liang;Chen,Po-Hen;Liu,Cheng-Yi;Chang,Jeng-Yang
贡献者:	光電科學與工程學系
关键词:	LIGHT-EMITTING-DIODES;FABRICATION
日期:	2008
上传时间:	2010-07-07 14:06:51 (UTC+8)
出版者:	中央大學
摘要:	A vertical-type gallium nitride blue light-emitting diode on silicon was prepared by using a laser lift-off process. A grid like surface was obtained after the laser lift-off process. The central part of the grid preserves a uniform surface morphology, bu
關聯:	JAPANESE JOURNAL OF APPLIED PHYSICS????
显示于类别:	[光電科學與工程學系] 期刊論文

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