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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35261


    Title: GaN-based Indium-tin-oxide light emitting diodes with nanostructured silicon upper contacts
    Authors: Kuo,C. H.;Chang,S. J.;Kuan,H.
    Contributors: 光電科學與工程學系
    Keywords: FIELD-EFFECT TRANSISTOR;INGAN-GAN;PERFORMANCE;LEDS;BLUE;ITO
    Date: 2007
    Issue Date: 2010-07-07 14:08:19 (UTC+8)
    Publisher: 中央大學
    Abstract: GaN-based indium-tin-oxide (ITO) light emitting diodes (LEDs) with p-GaN, n(+)-short period superlattice (SPS) and nanostructured silicon contact layers were fabricated. It was found that surface of the ITO LED with nanostructured silicon layer was very r
    Relation: IET OPTOELECTRONICS
    Appears in Collections:[光電科學與工程學系] 期刊論文

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