Direct fabrication of large-grain polycrystalline silicon thin films by RF-biased RF-PECVD at low temperature

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35300

Title:	Direct fabrication of large-grain polycrystalline silicon thin films by RF-biased RF-PECVD at low temperature
Authors:	Gu RD;Chen PL
Contributors:	光電科學與工程學系
Keywords:	INDUCED LATERAL CRYSTALLIZATION;SOLID-PHASE;TRANSISTORS;PLASMA;GROWTH;POLYSILICON;TFTS;TIME
Date:	2006
Issue Date:	2010-07-07 14:09:42 (UTC+8)
Publisher:	中央大學
Abstract:	Polycrystalline silicon (Poly-Si) films with large gains are successfully fabricated on glasses in a self-assembled RF-biased RF-PECVD tubular system. Both inductively coupled and capacitively coupled RF powers are employed. High purity (99.99%) SiH4, H-2
Relation:	THIN SOLID FILMS
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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