Enhanced light output of GaN-based power LEDs with transparent Al-doped ZnO current spreading layer

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35306

Title:	Enhanced light output of GaN-based power LEDs with transparent Al-doped ZnO current spreading layer
Authors:	Tun CJ;Sheu JK;Pong BJ;Lee ML;Lee MY;Hsieh CK;Hu CC;Chi GC
Contributors:	光電科學與工程學系
Keywords:	OXIDE OHMIC CONTACTS;P-TYPE GAN;EMITTING-DIODES;LOW-RESISTANCE;NI/AU
Date:	2006
Issue Date:	2010-07-07 14:09:54 (UTC+8)
Publisher:	中央大學
Abstract:	In this study, Al-doped ZnO (AZO) Ni-AZO and NiOx-AZO films were deposited on p-type GaN films. The depositions were followed by thermal annealing to form Ohmic contacts. The p-GaN-AZO contacts exhibited a non-Ohmic electrical characteristic. However, ele
Relation:	IEEE PHOTONICS TECHNOLOGY LETTERS
Appears in Collections:	[光電科學與工程學系] 期刊論文

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