Heteroepitaxial growth of GaAs on Si by MOVPE using a-GaAs/a-Si double-buffer layers

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35314

Title:	Heteroepitaxial growth of GaAs on Si by MOVPE using a-GaAs/a-Si double-buffer layers
Authors:	Uen,Wu-Yih;Li,Zhen-Yu;Huang,Yen-Chin;Chen,Meng-Chu;Yang,Tsun-Neng;Lan,Shan-Ming;Wu,Chih-Hung;Hong,Hwe-Fen;Chi,Gou-Chung
Contributors:	光電科學與工程學系
Keywords:	EPITAXIAL LATERAL OVERGROWTH;SHORT-PERIOD SUPERLATTICES;ON-SI;SILICON FILMS;MOCVD;REDUCTION;SUBSTRATE;QUALITY;DISLOCATIONS;TEMPERATURE
Date:	2006
Issue Date:	2010-07-07 14:10:11 (UTC+8)
Publisher:	中央大學
Abstract:	In this work, a buffer structure of a-GaAs/a-Si double amorphous layers was used for the epitaxial growth of GaAs on Si substrate by metal-organic vapor phase epitaxy. The atomic force microscopy (AFM) images exhibited that the root-mean-square (RMS) valu
Relation:	JOURNAL OF CRYSTAL GROWTH
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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