Improvement of near-ultraviolet nitride-based light emitting diodes with mesh indium tin oxide contact layers

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35319

Title:	Improvement of near-ultraviolet nitride-based light emitting diodes with mesh indium tin oxide contact layers
Authors:	Kuo,C. H.;Chen,C. M.;Kuo,C. W.;Tun,C. J.;Pan,C. J.;Pong,B. J.;Chi,G. C.
Contributors:	光電科學與工程學系
Keywords:	ITO TRANSPARENT CONTACT;GAN;LEDS
Date:	2006
Issue Date:	2010-07-07 14:10:21 (UTC+8)
Publisher:	中央大學
Abstract:	The authors have demonstrated nitride-based near-ultraviolet (NUV) light emitting diodes (LEDs) with mesh indium tin oxide (ITO) contact layer. With 20 mA injection current, it was found that forward voltages were 3.94 and 4.05 V while the output powers w
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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