Characterization of AlF3 thin films at 193 nm by thermal evaporation

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35346

Title:	Characterization of AlF3 thin films at 193 nm by thermal evaporation
Authors:	Lee,CC;Liu,MC;Kaneko,M;Nakahira,K;Takano,Y
Contributors:	光電科學與工程學系
Keywords:	MICROSTRUCTURAL PROPERTIES;OPTICAL-CONSTANTS;MGF2;ULTRAVIOLET;COATINGS;LITHOGRAPHY;DEPOSITION;FLUORIDE;BAF2;CAF2
Date:	2005
Issue Date:	2010-07-07 14:11:18 (UTC+8)
Publisher:	中央大學
Abstract:	Aluminum fluoride (AlF3) was deposited by a resistive heating boat. To obtain a low optical loss and high laser-induced damage threshold (LIDT) at 193 nm, the films were investigated under different substrate temperatures, deposition rates, and annealing
Relation:	APPLIED OPTICS
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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