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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35393

    Title: Microstructure, electrical, and optical properties of evaporated PtSi/p-Si(100) Schottky barriers as high quantum efficient infrared detectors
    Authors: Wu,HH;Chang,RS;Horng,GH
    Contributors: 光電科學與工程學系
    Keywords: SILICON;DIODES
    Date: 2004
    Issue Date: 2010-07-07 14:13:09 (UTC+8)
    Publisher: 中央大學
    Abstract: The effects of the microstructure and the electrical and optical properties on the formation at highly efficient infrared PtSi Schottky barrier detectors (SBD) have been studied in detail. Two- to twelve-nanometer-thick PtSi filins were grown by evaporati
    Relation: THIN SOLID FILMS
    Appears in Collections:[光電科學與工程學系] 期刊論文

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