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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35394


    Title: Nitride-based LEDs with 800 degrees C grown p-AllnGaN-GaN double-cap layers
    Authors: Chang,SJ;Wu,LW;Su,YK;Hsu,YP;Lai,WC;Tsai,JA;Sheu,JK;Lee,CT
    Contributors: 光電科學與工程學系
    Keywords: LIGHT-EMITTING-DIODES;CHEMICAL-VAPOR-DEPOSITION;QUANTUM-WELL BLUE;INGAN-GAN;FABRICATION;PERFORMANCE;ROUGHNESS;EVOLUTION;CONTACTS;MOVPE
    Date: 2004
    Issue Date: 2010-07-07 14:13:11 (UTC+8)
    Publisher: 中央大學
    Abstract: GaN-based light-emitting diodes (LEDs) with various p-cap layers were prepared. It was found that surface morphologies of the LEDs with 800 degreesC grown cap layers were rough due to the low lateral growth rate of GaN. It was also found that 20-mA forwar
    Relation: IEEE PHOTONICS TECHNOLOGY LETTERS
    Appears in Collections:[光電科學與工程學系] 期刊論文

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