Nitride-based LEDs with modulation-doped Al0.12Ga0.88N-GaN superlattice structures

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35395

Title:	Nitride-based LEDs with modulation-doped Al0.12Ga0.88N-GaN superlattice structures
Authors:	Wen,TC;Chang,SJ;Lee,CT;Lai,WC;Sheu,JK
Contributors:	光電科學與工程學系
Keywords:	LIGHT-EMITTING-DIODES;QUANTUM-WELL BLUE;INGAN-GAN;CONTACT;ITO
Date:	2004
Issue Date:	2010-07-07 14:13:13 (UTC+8)
Publisher:	中央大學
Abstract:	Modulation doped Al0.12Ga0.88N-GaN superlattice structures were used to spread pulse current in nitride-based light emitting diodes (LEDs). Although the 20-mA electroluminescence (EL) intensity of the LEDs with modulation-doped AlGaN-GaN superlattice stru
Relation:	IEEE TRANSACTIONS ON ELECTRON DEVICES
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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