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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35403


    Title: Si diffusion in p-GaN
    Authors: Pan,CJ;Chi,GC;Pong,BJ;Sheu,JK;Chen,JY
    Contributors: 光電科學與工程學系
    Keywords: IMPLANTATION;DIODES
    Date: 2004
    Issue Date: 2010-07-07 14:13:31 (UTC+8)
    Publisher: 中央大學
    Abstract: The characteristics of p-type Mg-doped GaN films diffused with Si are studied. N-type conductivity is achieved, and the carrier mobility of diffused GaN is 90-150 cm(2)V(-1) s(-1), higher than that of p-GaN but less than that of epitaxially grown n-GaN. T
    Relation: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    Appears in Collections:[Department of Optics and Photonics] journal & Dissertation

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