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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35409


    Title: Ultra-high-density InGaN quantum dots grown by metalorganic chemical vapor deposition
    Authors: Tu,RC;Tun,CJ;Chuo,CC;Lee,BC;Tsai,CE;Wang,TC;Chi,J;Lee,CP;Chi,GC
    Contributors: 光電科學與工程學系
    Keywords: MOLECULAR-BEAM EPITAXY;LIGHT-EMITTING-DIODES;GAN;IMPROVEMENT;TEMPERATURE;SURFACES;LAYER
    Date: 2004
    Issue Date: 2010-07-07 14:13:45 (UTC+8)
    Publisher: 中央大學
    Abstract: This study examined how the duration of SiNx treatment on an underlying GaN layer affects the optical property, surface morphology and density of following InGaN quantum dots (QDs). InGaN QDs with extremely high density of near 3 x 10(11) cm(-2) exhibited
    Relation: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    Appears in Collections:[光電科學與工程學系] 期刊論文

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