Improvement of near-ultraviolet InGaN-GaN light-emitting diodes through higher pressure grown underlying GaN layers

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35428

Title:	Improvement of near-ultraviolet InGaN-GaN light-emitting diodes through higher pressure grown underlying GaN layers
Authors:	Tu,RC;Tun,CJ;Pan,SM;Liu,HP;Tsai,CE;Sheu,JK;Chuo,CC;Wang,TC;Chi,GC;Chen,IG
Contributors:	光電科學與工程學系
Keywords:	LOW-OPERATION VOLTAGE;THREADING DISLOCATIONS;SUPERLATTICE;EVOLUTION;EPITAXY;SI
Date:	2003
Issue Date:	2010-07-07 14:14:29 (UTC+8)
Publisher:	中央大學
Abstract:	The 410-nm near-ultraviolet (near-UV) InGaN-GaN multiple quantum-wells light-emitting diodes (LEDs) with low-pressure-grown (200 mbar) and high-pressure-grown (400 mbar) Si-doped GaN underlying layers were grown on c-face sapphire substrates by Metal-orga
Relation:	IEEE PHOTONICS TECHNOLOGY LETTERS
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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