Improvement of near-ultraviolet InGaN-GaN light-emitting diodes with an AlGaN electron-blocking layer grown at low temperature

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35429

Title:	Improvement of near-ultraviolet InGaN-GaN light-emitting diodes with an AlGaN electron-blocking layer grown at low temperature
Authors:	Tu,RC;Tun,CJ;Pan,SM;Chuo,CC;Sheu,JK;Tsai,CE;Wang,TC;Chi,GC
Contributors:	光電科學與工程學系
Keywords:	LOW-OPERATION VOLTAGE;OHMIC CONTACTS;LASER-DIODES;SUPERLATTICE;POWER
Date:	2003
Issue Date:	2010-07-07 14:14:33 (UTC+8)
Publisher:	中央大學
Abstract:	The 400-nm near-ultraviolet InGaN-GaN multiple quantum well light-emitting diodes (LEDs) with Mg-doped AlGaN electron-blocking (EB) layers of various configurations and grown under various conditions, were grown on sapphire substrates by metal-organic vap
Relation:	IEEE PHOTONICS TECHNOLOGY LETTERS
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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