Investigation of degradation mechanism of Schottky diodes

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35433

Title:	Investigation of degradation mechanism of Schottky diodes
Authors:	Lee,HY;Lee,CT
Contributors:	光電科學與工程學系
Keywords:	ELECTRONIC BAND-STRUCTURE;FIELD-EFFECT TRANSISTORS;MOLECULAR-BEAM EPITAXY;GAAS;BARRIER;MESFET;HEMTS;LAYER
Date:	2003
Issue Date:	2010-07-07 14:14:42 (UTC+8)
Publisher:	中央大學
Abstract:	Schottky diode performance is influenced by fabrication processes. We present a model to investigate the dependence of Schottky diode performance on the fabrication process. To remove the native oxide layer, the In-0.5(Al0.66Ga0.34)(0.5)P surface was etch
Relation:	SOLID-STATE ELECTRONICS
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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