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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35435


    Title: Low alkaline contamination bottom antireflective coatings for both 193-and 157-nm lithography applications
    Authors: Chen,HL;Chuang,YF;Lee,CC;Hsieh,CI;Ko,FH;Wang,LA
    Contributors: 光電科學與工程學系
    Keywords: RESISTS
    Date: 2003
    Issue Date: 2010-07-07 14:14:47 (UTC+8)
    Publisher: 中央大學
    Abstract: A bilayer bottom antireflective coating (BARC) structure composed of TEOS oxide and silicon nitride film stacks is demonstrated for both ArF (193 nm) and F-2 (157 nm) excimer laser lithography. The top TEOS oxide film is an NH3-contaminant-free material t
    Relation: MICROELECTRONIC ENGINEERING
    Appears in Collections:[光電科學與工程學系] 期刊論文

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