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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35474

    Title: Investigation of double-delta-doped InAlGaP/GaAs/InGaAs field effect transistors
    Authors: Lee,HY;Lin,IJ;Shieh,HM;Lee,CT
    Contributors: 光電科學與工程學系
    Date: 2002
    Issue Date: 2010-07-07 14:21:04 (UTC+8)
    Publisher: 中央大學
    Abstract: The double-delta-doped In-0.5(Al0.7Ga0.3)(0.5)P/GaAs/In0.3Ga0.7As field-effect transistors (FETs) epitaxial layers were grown on (100)-oriented semi-insulating GaAs substrate using low-pressure metalorganic chemical vapor deposition system. To study the c
    Appears in Collections:[光電科學與工程學系] 期刊論文

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