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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35476


    Title: Investigation of transparent and conductive undoped Zn2In2O5-x films deposited on n-type GaN layers
    Authors: Lo,CY;Hsu,CL;Yu,QX;Lee,HY;Lee,CT
    Contributors: 光電科學與工程學系
    Keywords: INGAP SCHOTTKY CONTACT;INDIUM-TIN-OXIDE;ZNO THIN-FILMS;MSM PHOTODETECTORS;IN2O3-ZNO FILMS;OHMIC CONTACTS;ELECTRODES
    Date: 2002
    Issue Date: 2010-07-07 14:21:50 (UTC+8)
    Publisher: 中央大學
    Abstract: Transparent, conductive, multicomponent oxide films composed of undoped Zn2In2O5-x were deposited on n-type GaN layer using rf sputtering. We investigated the dependence of the surface, electrical, and optical properties on the sputtering parameters, incl
    Relation: JOURNAL OF APPLIED PHYSICS
    Appears in Collections:[光電科學與工程學系] 期刊論文

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