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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35497

    Title: Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures
    Authors: Polyakov,AY;Smirnov,NB;Govorkov,AV;Zhang,AP;Ren,F;Pearton,SJ;Chyi,JI;Nee,TE;Chou,CC;Lee,CM
    Contributors: 光電科學與工程學系
    Date: 2001
    Issue Date: 2010-07-07 14:32:50 (UTC+8)
    Publisher: 中央大學
    Abstract: GaN p-i-n rectifiers with 4 mum thick i-layers show typical reverse breakdown voltages of 100-600 V. We have studied the temperature dependence of current-voltage characteristics in these diodes, along with hole diffusion lengths and the deep level defect
    Appears in Collections:[光電科學與工程學系] 期刊論文

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