English  |  正體中文  |  简体中文  |  Items with full text/Total items : 67621/67621 (100%)
Visitors : 23052498      Online Users : 396
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35497


    Title: Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures
    Authors: Polyakov,AY;Smirnov,NB;Govorkov,AV;Zhang,AP;Ren,F;Pearton,SJ;Chyi,JI;Nee,TE;Chou,CC;Lee,CM
    Contributors: 光電科學與工程學系
    Keywords: VAPOR-PHASE EPITAXY;SPATIAL-DISTRIBUTION;ALGAN FILMS;SPECTROSCOPY;SCHOTTKY;TRAPS;BAND
    Date: 2001
    Issue Date: 2010-07-07 14:32:50 (UTC+8)
    Publisher: 中央大學
    Abstract: GaN p-i-n rectifiers with 4 mum thick i-layers show typical reverse breakdown voltages of 100-600 V. We have studied the temperature dependence of current-voltage characteristics in these diodes, along with hole diffusion lengths and the deep level defect
    Relation: JOURNAL OF ELECTRONIC MATERIALS
    Appears in Collections:[光電科學與工程學系] 期刊論文

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML377View/Open


    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明