Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35497

Title:	Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures
Authors:	Polyakov,AY;Smirnov,NB;Govorkov,AV;Zhang,AP;Ren,F;Pearton,SJ;Chyi,JI;Nee,TE;Chou,CC;Lee,CM
Contributors:	光電科學與工程學系
Keywords:	VAPOR-PHASE EPITAXY;SPATIAL-DISTRIBUTION;ALGAN FILMS;SPECTROSCOPY;SCHOTTKY;TRAPS;BAND
Date:	2001
Issue Date:	2010-07-07 14:32:50 (UTC+8)
Publisher:	中央大學
Abstract:	GaN p-i-n rectifiers with 4 mum thick i-layers show typical reverse breakdown voltages of 100-600 V. We have studied the temperature dependence of current-voltage characteristics in these diodes, along with hole diffusion lengths and the deep level defect
Relation:	JOURNAL OF ELECTRONIC MATERIALS
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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