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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35536


    Title: High performance of Schottky barriers for Cu contacted with InGaP/GaAs layers
    Authors: Lee,CT;Tsai,CD;Shiao,HP
    Contributors: 光電科學與工程學系
    Date: 2000
    Issue Date: 2010-07-07 14:35:21 (UTC+8)
    Publisher: 中央大學
    Abstract: We present the characteristics of Cu Schottky contacts on wide band gap InGaP semiconductors with and without sulfur treatment before Schottky contact deposition, and investigate the influence of post-heat treatment on the Schottky diodes. With sulfur tre
    Relation: OPTICAL MATERIALS
    Appears in Collections:[光電科學與工程學系] 期刊論文

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