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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35537


    Title: High-dielectric-constant Ta2O5/n-GaN metal-oxide-semiconductor structure
    Authors: Tu,LW;Kuo,WC;Lee,KH;Tsao,PH;Lai,CM;Chu,AK;Sheu,JK
    Contributors: 光電科學與工程學系
    Keywords: DEAD LAYER MODEL;GAN EPIFILMS;PHOTOLUMINESCENCE;TEMPERATURE;DEPENDENCE;DENSITY;FILMS;STATE
    Date: 2000
    Issue Date: 2010-07-07 14:35:23 (UTC+8)
    Publisher: 中央大學
    Abstract: High-dielectric-constant Ta2O5 has been grown on the n-GaN epifilm by rf magnetron sputtering. Photoluminescence measurement has been performed to compare the luminescence intensity with and without the dielectrics. Threefold increase in intensity is obta
    Relation: APPLIED PHYSICS LETTERS
    Appears in Collections:[光電科學與工程學系] 期刊論文

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