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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35540


    Title: Investigation of surface treatments for nonalloyed ohmic contact formation in Ti/Al contacts to n-type GaN
    Authors: Lin,YJ;Lee,CT
    Contributors: 光電科學與工程學系
    Keywords: TRANSISTOR
    Date: 2000
    Issue Date: 2010-07-07 14:35:28 (UTC+8)
    Publisher: 中央大學
    Abstract: To investigate the possibility of preparing a nonalloyed ohmic contact to n-type GaN, the effects of GaN surface treatments on the metal/GaN interface were studied using x-ray photoelectron spectroscopy. A specific contact resistance of 5.0x10(-5) Omega c
    Relation: APPLIED PHYSICS LETTERS
    Appears in Collections:[光電科學與工程學系] 期刊論文

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