Laser-assisted plasma-enhanced chemical vapor deposition of silicon nitride thin film

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35542

Title:	Laser-assisted plasma-enhanced chemical vapor deposition of silicon nitride thin film
Authors:	Tsai,HS;Jaw,GJ;Chang,SH;Cheng,CC;Lee,CT;Liu,HP
Contributors:	光電科學與工程學系
Date:	2000
Issue Date:	2010-07-07 14:35:31 (UTC+8)
Publisher:	中央大學
Abstract:	Hydrogenated amorphous silicon-nitride (a-Si-N-x:H) films with low hydrogen content were deposited using a CO2 laser-assisted PECVD, or LAPECVD system. This system was based upon a conventional capacitive RF (13.56 MHz) discharge to dissociate both ammoni
Relation:	SURFACE & COATINGS TECHNOLOGY
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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