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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35545


    Title: Monolithic photoreceiver constructed with InGaP/GaAs/InGaP MSM photodetectors and conventional GaAs MESFETs
    Authors: Doong,MS;Liu,DS;Lee,CT
    Contributors: 光電科學與工程學系
    Keywords: SCHOTTKY CONTACT;TI/PT/AU METALS;PERFORMANCES;RELIABILITY;EPITAXY
    Date: 2000
    Issue Date: 2010-07-07 14:35:36 (UTC+8)
    Publisher: 中央大學
    Abstract: We present a novel monolithic photoreceiver operating with a gain of 25 dB and a 3-dB bandwidth of above 2 GHz. In this photoreceiver, a high performance of GaAs metal-semiconductor-metal photodetector with InGaP buffer and capping layers was used. As wel
    Relation: SOLID-STATE ELECTRONICS
    Appears in Collections:[光電科學與工程學系] 期刊論文

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