Nonalloyed GaAs metal-semiconductor field effect transistor

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35547

Title:	Nonalloyed GaAs metal-semiconductor field effect transistor
Authors:	Lee,CT;Huang,JH;Tsai,CD
Contributors:	光電科學與工程學系
Keywords:	MOLECULAR-BEAM EPITAXY;OHMIC CONTACTS;MULTIQUANTUM BARRIER;THERMAL-STABILITY;RESISTANCE;MESFET;LAYER;TEMPERATURE;INAS/INGAAS
Date:	2000
Issue Date:	2010-07-07 14:35:39 (UTC+8)
Publisher:	中央大學
Abstract:	A novel GaAs metal-semiconductor field-effect transistor (MESFET) with Al0.25Ga0.75As/GaAs multiquantum barrier (MQB) buffer layer and narrow band InAs/graded InGaAs capping layer was demonstrated. The MQB buffer layer can improve the sidegating effect an
Relation:	SOLID-STATE ELECTRONICS
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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