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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35617


    Title: A statistical simulation approach for early stage thin-film growth from vapor-deposited atoms
    Authors: Chen,Peilong;Wang,T. Y.;Luo,M. F.
    Contributors: 奈米科技研究中心
    Keywords: SUBMONOLAYER EPITAXIAL-GROWTH;SCANNING-TUNNELING-MICROSCOPY;MEDIATED ISLAND GROWTH;CRITICAL CLUSTER-SIZE;SURFACE-DIFFUSION;OXIDE SURFACES;METAL-FILMS;NUCLEATION;MODEL;AL2O3/NIAL(100)
    Date: 2007
    Issue Date: 2010-07-07 15:45:35 (UTC+8)
    Publisher: 中央大學
    Abstract: We present a statistical simulation method for the early stage of thin-film growth from vapor-deposited atoms, which simulate evolution of density, size, and spatial distribution of the growing islands on a supported substrate. The method describes surfac
    Relation: JOURNAL OF CHEMICAL PHYSICS
    Appears in Collections:[奈米科技研究中心 ] 期刊論文

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