English  |  正體中文  |  简体中文  |  Items with full text/Total items : 68069/68069 (100%)
Visitors : 23122441      Online Users : 455
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version

    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35689

    Title: Microstructure of InN quantum dots grown on AlN buffer layers by metal organic vapor phase epitaxy
    Authors: Chen,J. Y.;Chi,G. C.;Huang,P. J.;Chen,M. Y.;Hung,S. C.;Nien,C. H.;Chen,M. C.;Lan,S. M.;Pong,B. J.;Pan,C. J.;Tun,C. J.;Ren,F.;Chang,C. Y.;Pearton,S. J.
    Contributors: 光電科學研究中心
    Date: 2008
    Issue Date: 2010-07-07 15:49:01 (UTC+8)
    Publisher: 中央大學
    Abstract: InN quantum dots (QDs) were grown over 2 in. Si (1 1 1) wafers with a 300 nm thick AlN buffer layer by atmospheric-pressure metal organic vapor phase epitaxy. When the growth temperature increased from 450 to 625 degrees C, the corresponding InN QDs heigh
    Appears in Collections:[光電科學研究中心] 期刊論文

    Files in This Item:

    File Description SizeFormat

    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明