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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35689


    Title: Microstructure of InN quantum dots grown on AlN buffer layers by metal organic vapor phase epitaxy
    Authors: Chen,J. Y.;Chi,G. C.;Huang,P. J.;Chen,M. Y.;Hung,S. C.;Nien,C. H.;Chen,M. C.;Lan,S. M.;Pong,B. J.;Pan,C. J.;Tun,C. J.;Ren,F.;Chang,C. Y.;Pearton,S. J.
    Contributors: 光電科學研究中心
    Keywords: MOLECULAR-BEAM EPITAXY;WURTZITE INN
    Date: 2008
    Issue Date: 2010-07-07 15:49:01 (UTC+8)
    Publisher: 中央大學
    Abstract: InN quantum dots (QDs) were grown over 2 in. Si (1 1 1) wafers with a 300 nm thick AlN buffer layer by atmospheric-pressure metal organic vapor phase epitaxy. When the growth temperature increased from 450 to 625 degrees C, the corresponding InN QDs heigh
    Relation: APPLIED PHYSICS LETTERS
    Appears in Collections:[光電科學研究中心] 期刊論文

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