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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35690


    Title: Residual strain in ZnO nanowires grown by catalyst-free chemical vapor deposition on GaN/sapphire (0001)
    Authors: Tsao,F. C.;Chen,J. Y.;Kuo,C. H.;Chi,G. C.;Pan,C. J.;Huang,P. J.;Tun,C. J.;Pong,B. J.;Hsueh,T. H.;Chang,C. Y.;Pearton,S. J.;Ren,F.
    Contributors: 光電科學研究中心
    Keywords: LIGHT-EMITTING-DIODES;NANOBELTS;HETEROSTRUCTURE;DEVICES
    Date: 2008
    Issue Date: 2010-07-07 15:49:03 (UTC+8)
    Publisher: 中央大學
    Abstract: ZnO nanowires were grown on 2-mu m-thick GaN templates by chemical vapor deposition without employing any metal catalysts. The GaN template was deposited by metal-organic chemical vapor deposition on a c-plane sapphire substrate. The diameters of the resu
    Relation: APPLIED PHYSICS LETTERS
    Appears in Collections:[光電科學研究中心] 期刊論文

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