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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35695


    Title: Characterizations of InN films on Si(111) substrate grown by metal-organic chemical vapor deposition with a predeposited In layer and a two-step growth method
    Authors: Chang,K. J.;Chang,J. Y.;Chen,M. C.;Lahn,S. M.;Kao,C. J.;Li,Z. Y.;Uen,W. Y.;Chi,G. C.
    Contributors: 光電科學研究中心
    Keywords: FUNDAMENTAL-BAND GAP;THIN-FILMS;TEMPERATURE-DEPENDENCE;OPTICAL-ABSORPTION;HEXAGONAL INN;PHOTOLUMINESCENCE;ENERGY;EDGE;SPECTROSCOPY;ALLOYS
    Date: 2007
    Issue Date: 2010-07-07 15:49:10 (UTC+8)
    Publisher: 中央大學
    Abstract: In this study, a two-step growth method with a thin predeposited indium (In) layer is reported to grow high-quality indium nitride (InN) films on silicon (Si) substrates by metal-organic chemical vapor deposition. The surface morphologies of the InN films
    Relation: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
    Appears in Collections:[光電科學研究中心] 期刊論文

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