English  |  正體中文  |  简体中文  |  Items with full text/Total items : 65318/65318 (100%)
Visitors : 21600610      Online Users : 111
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35697


    Title: Dislocation reduction in GaN with multiple MgxNy/GaN buffer layers by metal organic chemical vapor deposition
    Authors: Tun,C. J.;Kuo,C. H.;Fu,Y. K.;Kuo,C. W.;Pan,C. J.;Chi,G. C.
    Contributors: 光電科學研究中心
    Keywords: LIGHT-EMITTING-DIODES;LASER-DIODES;MQW LEDS;SCATTERING;SUBSTRATE;EVOLUTION;GROWTH;FILMS
    Date: 2007
    Issue Date: 2010-07-07 15:49:13 (UTC+8)
    Publisher: 中央大學
    Abstract: Unintentionally doped GaN epitaxial layers with a conventional single low temperature (LT) GaN buffer layer and with multiple MgxNy/GaN buffer layers were grown on sapphire substrates by metal organic chemical vapor deposition. The multiple MgxNy/GaN buff
    Relation: APPLIED PHYSICS LETTERS
    Appears in Collections:[光電科學研究中心] 期刊論文

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML651View/Open


    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明