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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35698


    Title: Effect of thermal annealing on Ga-doped ZnO films prepared by magnetron sputtering
    Authors: Sheu,J. K.;Shu,K. W.;Lee,M. L.;Tun,C. J.;Chi,G. C.
    Contributors: 光電科學研究中心
    Keywords: LIGHT-EMITTING-DIODES;OXIDE-FILMS;ELECTRICAL-PROPERTIES;ROOM-TEMPERATURE;OHMIC CONTACTS;PHOTOLUMINESCENCE;CONDUCTIVITY;DEPOSITION;METAL
    Date: 2007
    Issue Date: 2010-07-07 15:49:15 (UTC+8)
    Publisher: 中央大學
    Abstract: In this study, Ga-doped ZnO (GZO) films deposited on a sapphire utilizing magnetron cosputtering method using ZnO and Ga2O3 targets were demonstrated. The results revealed that the resistivities of the GZO films reduced by at least two orders of magnitude
    Relation: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    Appears in Collections:[光電科學研究中心] 期刊論文

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