Photoluminescence of ZnO films grown by plasma-assisted molecular beam epitaxy

NCUIR > Research Center > Optical Sciences Center > journal & Dissertation > Item 987654321/35712

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35712

Title:	Photoluminescence of ZnO films grown by plasma-assisted molecular beam epitaxy
Authors:	Pan,CJ;Tu,CW;Song,JJ;Cantwell,G;Lee,CC;Pong,BJ;Chi,GC
Contributors:	光電科學研究中心
Keywords:	ROOM-TEMPERATURE;THIN-FILMS;EMISSION;GAN
Date:	2005
Issue Date:	2010-07-07 15:49:35 (UTC+8)
Publisher:	中央大學
Abstract:	Photoluminescence (PL) of homoepitaxial and heteroepitaxial ZnO films grown by plasma-assisted molecular beam epitaxy is studied. Homoepitaxial ZnO layers were grown oil an O-face melt-grown ZnO (000 1) substrate. Heteroepitaxial ZnO layers were grown on
Relation:	JOURNAL OF CRYSTAL GROWTH
Appears in Collections:	[Optical Sciences Center] journal & Dissertation

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