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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35717


    Title: Nitride-based near-ultraviolet LEDs with an ITO transparent contact
    Authors: Kuo,CH;Chang,SJ;Su,Y;Chuang,RW;Chang,CS;Wu,LW;Lai,WC;Chen,JF;Sheu,J;Lo,HM;Tsai,JM
    Contributors: 光電科學研究中心
    Keywords: LIGHT-EMITTING-DIODES;QUANTUM-WELL BLUE;INGAN-GAN;O-2 AMBIENT;OPERATION
    Date: 2004
    Issue Date: 2010-07-07 15:49:43 (UTC+8)
    Publisher: 中央大學
    Abstract: Indium tin oxide (ITO) (2300 nm) and Ni (5 nm)/Au (10 nm) films were deposited onto glass substrates, p-GaN layers, n(=)-InGaN/GaN short-period-superlattice (SPS) structures and near-ultraviolet (near-UV) In0.05Ga0.95l0.1Ga0.9N light emitting diodes (L
    Relation: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
    Appears in Collections:[光電科學研究中心] 期刊論文

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