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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35720


    Title: Deep level defect in Si-implanted GaN n(+)-p junction
    Authors: Chen,XD;Huang,Y;Fung,S;Beling,CD;Ling,CC;Sheu,JK;Lee,ML;Chi,GC;Chang,SJ
    Contributors: 光電科學研究中心
    Keywords: N-TYPE GAN;MG-DOPED GAN;TRANSIENT SPECTROSCOPY;SURFACE-STATES;DLTS SPECTRA;GAAS-MESFETS;EPITAXY;REGION
    Date: 2003
    Issue Date: 2010-07-07 15:49:47 (UTC+8)
    Publisher: 中央大學
    Abstract: A deep level transient spectroscopy (DLTS) study has been performed on a GaN n(+)-p junction fabricated by implanting Si into a Mg-doped p-type GaN epilayer. A high concentration of a deep level defect has been revealed within the interfacial region of th
    Relation: APPLIED PHYSICS LETTERS
    Appears in Collections:[光電科學研究中心] 期刊論文

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